Non-volatile, programmable, static memory cell and a...

Details Non-volatile, programmable, static memory cell and a... Non-volatile, programmable, static memory cell and a...

G - Physics

11

C

352/82.3

G11C 11/00 (2006.01) G11C 14/00 (2006.01)

Patent

CA 1255792

PHN 11.399 1.11.1985 ABSTRACT: Non-volatile, programmable, static memory cell and a non-volatile, programmable, static memory. A memory and a non-volatile, programmable, static memory cell in which a programmable transistor and a capacitance are added to a known static memory cell. The cross-wise couplings between the transistors of the static cell form a first and a second junction. The gate and a main electrode (drain) of the programmable transistor are connected to the first junction. The second junction is connected to an injection location opposite the floating gate of the programmable transistor whose channel is connected in series with the capacitance the other side of which is connected to the sources of the two transistors of the static cell.

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