H - Electricity – 03 – K
Patent
H - Electricity
03
K
328/150
H03K 19/08 (2006.01) G11C 11/40 (2006.01) G11C 14/00 (2006.01)
Patent
CA 1150784
ABSTRACT "Non-volatile Semiconductor Memory Circuits" An NMOS non-volatile latch having N-channel drivers Q1 and Q2 and variable threshold N-channel FATMOS transistors Q3 and Q4 as depletion loads. The control gate of each FATMOS transistor is coupled to its own node (X1 or X2) so as to operate in depletion, whereas to obtain the correct voltage stresses the tunnels of the FATMOS floating gates are cross-coupled to the opposite latch nodes.
363992
Gowling Lafleur Henderson Llp
Raytheon Company
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