G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.3
G11C 11/34 (2006.01) G11C 14/00 (2006.01) H03K 17/693 (2006.01)
Patent
CA 1193010
ABSTRACT. "Non-volatile Semiconductor Memory Circuit". Memory circuits having a floating gate transistor as a non-volatile storage element are constructed with a shunt transistor across the floating-gate transistor which in the event of a short circuit between the floating gate and the transistor substrate causes the memory to go into a predetermined fail-safe condition. The circuits are cross-coupled flip-flops with a driver and a complementary driver or load connected in series in each of the circuits, one driver or complementary driver or load being a floating gate transistor such as a FATMOS. Short circuiting of the floating gate to the control gate of the floating-gate transistor gives the same fail-safe condition.
409975
Edwards Colin W.
Murray Kenelm G.d.
Gowling Lafleur Henderson Llp
Raytheon Company
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