G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 16/02 (2006.01) G11C 5/14 (2006.01) G11C 7/10 (2006.01) G11C 16/14 (2006.01) G11C 16/26 (2006.01) G11C 16/30 (2006.01)
Patent
CA 2675561
A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.
L'invention concerne un dispositif mémoire qui comporte une mémoire centrale telle qu'une mémoire flash pour stocker des données. Le dispositif mémoire présente une première entrée d'alimentation pour recevoir une première tension utilisée pour alimenter la mémoire flash. En outre, le dispositif mémoire comporte une seconde entrée d'alimentation pour recevoir une seconde tension. Le dispositif mémoire comprend des éléments de circuit de gestion d'alimentation conçu pour recevoir la seconde tension et dériver une ou plusieurs tensions internes. Les éléments de circuit de gestion d'alimentation fournissent ou transportent les tensions internes à la mémoire flash. Les différentes tensions internes générées par les éléments de circuit de gestion d'alimentation (par exemple, par le circuit convertisseur de tension) et adressées à la mémoire centrale permettent des opérations telles que lecture/programmation/effacement par rapport aux cellules dans la mémoire centrale.
Gillingham Peter
Kim Jin-Ki
Hammond Daniel
Mosaid Technologies Incorporated
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