Non-volatile static randomm-access memory cell

Details Non-volatile static randomm-access memory cell Non-volatile static randomm-access memory cell

G - Physics

11

C

352/41, 352/82.1

G11C 11/40 (2006.01) G11C 14/00 (2006.01)

Patent

CA 1206615

-24- ABSTRACT- "Non-volatile static random-acceas memory cell". A non-volatile memory cell (20) contains a pair of cross-coupled like-polarity FET's (Q1 and Q2) that serve as a volatile location (213 for storing a data bit and a like-polarity variable-threshold insulated-gate FET (Q3) that serves as a non-volatile storage location (22). The variable-theshold FET has its source coupled to the drain of one of the cross-coupled FET's, its insulated gate electrode coupled to the drain of the other of the cross- coupled FET's, and its drain coupled to a power supply. Just before a power shutdown which causes the data bit to evaporate, the power supply is pulsed to a suitable level to cause the bit to be transferred to the non-vo- latile location. When power is restored to the normal level, the original data bit automatically returns to the volatile location.

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