H - Electricity – 04 – B
Patent
H - Electricity
04
B
H04B 10/02 (2006.01) G02F 1/017 (2006.01) G02F 1/355 (2006.01) G02F 1/37 (2006.01)
Patent
CA 2166041
The nonlinear optical element for extremely high bit rates comprises a plate made of semiconductor material, in which is there is realized a sequence of variously doped layers, which can be passed through, in operation, by one or more light radiations. The element comprises a sequence of structures which exhibit excitonic nonlinearities, and which are placed geometrically close to layers of larger sizes, which act as dilution/recombination tanks for the carriers eliminated by the nonlinear structures. The element allows realization of optical devices, such as memories, directional couplers, switches, etc., in which fast excitonic nonlinearity is very evident and in which carriers are eliminated in time intervals of 1 to 10 ps, so that the devices are able to function at extremely high bit rates.
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