Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

G - Physics

11

C

G11C 16/04 (2006.01) G11C 16/12 (2006.01) H01L 27/115 (2006.01) H01L 29/788 (2006.01)

Patent

CA 2286193

A nonvolatile memory cell is formed in an embedded P-well without the necessity of including an overlaying control gate. As a result, normal logic process technology may be utilized to form the nonvolatile memory cell. Through the use of substrate hot electron injection and the formation of a lateral bipolar transistor whose emitter acts as a charge injector, programming efficiency is improved and the necessary programming voltages and currents can be reduced from the relatively high voltages and currents used in other devices.

L'invention concerne une cellule de mémoire rémanente formée dans un caisson d'isolement du type P, ne nécessitant pas l'insertion d'une grille de commande superposée. On peut donc utiliser les techniques classiques de processus logique pour constituer ladite cellule. Le recours à l'injection d'électrons chauds sur le substrat et à la formation d'un transistor bipolaire latéral dont l'émetteur tient lieu d'injecteur de charges permet d'améliorer l'efficacité de programmation, et aussi de réduire les tensions et les courants de programmation nécessaires par rapport aux tensions et courants relativement élevés utilisés dans d'autres dispositifs.

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