Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

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G11C 11/40 (2006.01) G11C 11/411 (2006.01) G11C 14/00 (2006.01) G11C 16/04 (2006.01) H01L 27/02 (2006.01) H01L 27/07 (2006.01) H01L 27/102 (2006.01)

Patent

CA 1128660

NONVOLATILE SEMICONDUCTOR MEMORY Abstract of the Disclosure An I2L type nonvolatile memory has a structure wherein a floating gate is disposed through an insulating film on the surface of a semiconductor layer in the vicinity of a base region of an NPN transistor in an I2L. The memory controls current to flow through the base region of the NPN transistor of the I2L by means of charges stored in the floating gate. The collector output current of the NPN transistor of the I2L is modulated depending on the presence or absence of a channel beneath the floating gate, being generated depending on the presence or absence of charges within the floating gate and the polarity of the charges. As a result, a variation of the base current appears as an output signal at a collector terminal of the NPN transistor of the I2L, and data stored in the floating gate can be read out.

340918

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