Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

H - Electricity

01

L

H01L 29/788 (2006.01) G11C 16/04 (2006.01) H01L 27/115 (2006.01) H01L 29/423 (2006.01)

Patent

CA 2286180

A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. A select transistor can have a source which also acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor operates as a charge injector. The charge injector provides electrons for substrate hot electron injection of electrons onto the floating gate for programming. The cell depletion/inversion region may be extended by forming a capacitor as an extension of the control gate over the substrate between the source and channel of said sense transistor.

Cette cellule de mémoire non-volatile, qui est hautement modulable, comporte une cellule qui est formée dans un puits triple. Un transistor de sélection peut comporter une source qui fonctionne comme l'émetteur d'un transistor bipolaire latéral. Ce transistor bipolaire latéral sert d'injecteur de charge. L'injecteur de charge fournit au niveau de la porte à programmer les électrons destinés à l'injection à chaud d'électrons en substrat. La région d'appauvrissement/inversion de la cellule peut être étendue par installation d'une capacité en extension de la grille de commande, sur le substrat, entre la source et le canal du transistor de lecture considéré.

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