Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

G - Physics

11

C

352/40

G11C 11/34 (2006.01) H01L 29/788 (2006.01)

Patent

CA 1142646

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE ABSTRACT OF THE DISCLOSURE A nonvolatile semiconductor memory device comprising: a substrate, a pair of source and drain regions; a channel region between the source and drain regions; a pair of first and second insulating layers on the channel region, and; a floating-gate or traps between the first and second insulating layer is disclosed. In the first insulating layer, the gap of an energy band thereof is increased from the portion of the substrate to the portion of the floating gate or the traps.

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