Nonvolative random access memory device

Details Nonvolative random access memory device Nonvolative random access memory device

H - Electricity

01

L

H01L 27/11 (2006.01) G11C 11/404 (2006.01) H01L 27/102 (2006.01) H01L 29/24 (2006.01)

Patent

CA 2124355

A random access memory (RAM) cell in silicon carbide having storage times when all bias is removed long enough to be considered nonvolatile, The nonvolatile random access memory (NVRAM) cell comprises a bit line, a charge storage device in silicon carbide, and a transistor in silicon carbide connecting the charge storage device to the bit line. The bipolar NVRAM cell has a bipolar transistor with a base region, an emitter region, and a floating collector region, wherein the charge storage device in the bipolar NVRAM is a p-n junction adjacent the floating collector region of the cell. The metal-oxide-semiconductor (MOS) NVRAM has a MOS field effect transistor (MOSFET) with a channel region, a source region, and a drain region, wherein the charge storage device in the MOS NVRAM is a MOS capacitor adjacent the drain region of the MOSFET,

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