Normally-off integrated jfet power switches in wide bandgap...

Details Normally-off integrated jfet power switches in wide bandgap... Normally-off integrated jfet power switches in wide bandgap...

H - Electricity

01

L

H01L 27/098 (2006.01) H01L 21/04 (2006.01) H01L 21/8232 (2006.01) H01L 29/808 (2006.01) H01L 29/812 (2006.01)

Patent

CA 2729299

Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single-or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature -tolerant and radiation-resistant electronics components. Methods of making the devices are also described.

Dispositifs à semi-conducteurs à large bande interdite comprenant des commutateurs VJFET normalement coupés. Ces commutateurs de puissance peuvent être mise en oeuvre monolithiquement ou hydridement, et intégrés à un module à semi-conducteurs de puissance à large bande interdite intégré à un circuit ou bien à puce unique ou à une multipuce. Les dispositifs peuvent s'utiliser dans des composants électroniques haute puissance, insensibles à la température et résistant aux rayonnements. Sont également décrits des procédés de fabrication de ces dispositifs.

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