C - Chemistry – Metallurgy – 22 – C
Patent
C - Chemistry, Metallurgy
22
C
117/226, 75/34,
C22C 5/04 (2006.01) B41J 2/05 (2006.01) B41J 2/14 (2006.01) B41J 2/16 (2006.01) C22C 27/02 (2006.01) C22C 30/00 (2006.01) C22C 45/10 (2006.01) C23C 14/14 (2006.01) C23C 14/16 (2006.01)
Patent
CA 2028124
There is provided a non-single crystalline material characterized by containing Ir, Ta and Al at the following respective composition rates: 28 atom percent ? Ir ? 90 atom percent, 5 atom percent ? Ta ? 65 atom percent, and 1 atom percent ? Al ? 45 atom percent. There is also provided a member comprising a substrate and a film composed of said non-single crystalline material being disposed on said substrate.
Hasegawa Kenji
Kimura Isao
Shiozaki Atsushi
Touma Kouichi
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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