Novel silicon carbide dummy wafer

Details Novel silicon carbide dummy wafer Novel silicon carbide dummy wafer

H - Electricity

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H01L 21/00 (2006.01) C04B 35/573 (2006.01) C04B 35/576 (2006.01) C04B 38/00 (2006.01) C04B 41/87 (2006.01) C30B 25/02 (2006.01) H01L 21/02 (2006.01) H01L 21/18 (2006.01) H01L 21/70 (2006.01)

Patent

CA 2188290

The present invention relates to an unsiliconized or siliconized wafer consisting essentially of recrystallized silicon carbide, the wafer having a diameter of at least 150 mm and a thickness of between 0.5 and 2 mm, and having a porosity or free silicon content between 15 v/o and 43 v/o.

L'invention se rapporte à une tranche non siliconée ou siliconée constituée essentiellement de carbure de silicium recristallisé. La tranche a un diamètre d'au moins 150 mm, une épaisseur d'environ 0,5 à 2 mm et une porosité ou teneur en silicium libre se situant entre 15 % et 43 % du volume.

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