Npn/pnp fabrication process with improved alignment

Details Npn/pnp fabrication process with improved alignment Npn/pnp fabrication process with improved alignment

H - Electricity

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356/125, 356/178

H01L 29/70 (2006.01) H01L 27/02 (2006.01) H01L 27/082 (2006.01) H01L 29/735 (2006.01)

Patent

CA 1118909

NPN/PNP FABRICATION PROCESS WITH IMPROVED ALIGNMENT ABSTRACT OF THE DISCLOSURE: A double diffused, lateral PNP structure is disclosed which may be formed simultaneously with the vertical NPN structure. The novel feature of the struc- ture is the vertical projection of the N-type base region for the PNP, down through the surrounding diffused P-type collector?and into an N-type epitaxial layer between the collector diffusion and a buried sub-base, an N-type "sub-base", to electrically contact the base. The N-type epitaxial layer serves as the extrinsic base region per- mitting contact with the surface. The double diffused base and emitter structure permits a precise intrinsic base width to be formed for the lateral PNP. Thus, a high performance PNP can be constructed with compatible high performance NPNs on the same substrate.

308650

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