Ohmic contact and process for producing the same

Details Ohmic contact and process for producing the same Ohmic contact and process for producing the same

H - Electricity

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H01L 23/48 (2006.01) H01L 21/28 (2006.01) H01L 29/43 (2006.01) H01L 29/45 (2006.01) H01L 31/02 (2006.01) H01L 31/06 (2006.01) H01L 31/10 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2260574

An ohmic contact accumulated on a substrate of a p-type InP based compound semiconductor crystal is disclosed, comprising plural metallic layers comprising, in this sequence from a side of the substrate, a first layer comprising a transitional metal, a second layer comprising Zn, and a third layer comprising a transitional metal. A process for producing an ohmic contact accumulated on a substrate of a p-type InP based compound semiconductor crystal is also disclosed, comprising: accumulating plural metallic layers comprising, in this sequence from the substrate, a first layer comprising a transitional metal, a second layer comprising Zn, and a third layer comprising a transitional metal; and then conducting heat treatment at a temperature within a range of 350 to 400~C.

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