Ohmic contact layer

Details Ohmic contact layer Ohmic contact layer

H - Electricity

01

L

356/119, 356/42

H01L 31/02 (2006.01) H01L 31/0392 (2006.01) H01L 31/06 (2006.01) H01L 31/068 (2006.01) H01L 31/075 (2006.01)

Patent

CA 1218167

ABSTRACT An electronic device having at least two superposed layers of amorphous semiconductor material of differing conductivity types and a sufficiently low number of defect states so as to form a rectifying junction between the layers, including a defect states introduction layer proximate the junction. The defect introduction layer includes a sufficient density of defect states to promote the flow of current by tunneling of charge carriers and thereby to establish an ohmic contact. Methods of forming the improved ohmic contact device are also disclosed.

473722

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