Ohmic contact structure of high integrated semiconductor...

Details Ohmic contact structure of high integrated semiconductor... Ohmic contact structure of high integrated semiconductor...

H - Electricity

01

L

H01L 23/485 (2006.01) H01L 21/283 (2006.01) H01L 21/285 (2006.01) H01L 23/50 (2006.01) H01L 29/45 (2006.01)

Patent

CA 2116746

The present invention relating to an ohmic contact structure for connection of an electrode to a high integrated semiconductor device and a method for making the same, may be usefully applied to low resistance of electronic lines and high reliability in high integrated semiconductor devices, by forming selectively on a contact hole a material having a smaller bandgap than that of a substrate material to lower a contact resistance and by forming a material of hetero-junction structure under the above material to minimize stress and strain between a metal and a semiconductor.

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