Ohmic contact to p-type group iii-v semiconductors

Details Ohmic contact to p-type group iii-v semiconductors Ohmic contact to p-type group iii-v semiconductors

H - Electricity

01

L

356/174

H01L 21/20 (2006.01) H01L 21/285 (2006.01)

Patent

CA 1203324

- 12 - Abstract A plurality of pairs of layers comprising gold and zinc are successively evaporated onto a p-type Group III-V semiconductor material such as indium phosphide. A final layer of gold is evaporated onto the pairs of layers prior to heating the multilayer contact. Successive layers of chromium and gold may be evaporated onto the final gold layer prior to the annealing step.

443919

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