Ohmic electrode

Details Ohmic electrode Ohmic electrode

H - Electricity

01

L

356/174

H01L 29/40 (2006.01) H01L 21/285 (2006.01) H01L 29/45 (2006.01)

Patent

CA 1307358

Abstract of the Disclosure This invention comprises a Pd layer formed on an n- type GaAs semiconductor crystals, and a Ge layer being formed on the Pd layer, characterized in that the thickness of the Pd layer is between 300 .ANG. and 1500 .ANG. and the thickness of the Ge layer is between 500 .ANG. and 1500 .ANG.. And this invention provides an ohmic electrode forming process for compound semiconductor crystals for forming an ohmic electrode on an n-type GaAs semiconductor crystals, comprising a first layer forming step for forming a palladium (pd) layer on a compound semiconductor crystal; a second layer forming step for forming a germanium layer (Ge) on the Pd layer; and a annealing step for annealing the Pd layer and the Ge layer by a rapid thermal annealing treatment. The Pd layer is formed between 300 .ANG. and 1500 .ANG. in the first layer forming step; the Ge layer is between 500 .ANG. and 1500 .ANG. in the second layer forming step; and the Pd layer and the Ge layer are heated in the annealing step for 3 seconds to 20 seconds at a temperature of 500 °C to 650 °C by a rapid thermal annealing treatment. As the rapid thermal annealing treatment, the flash annealing treatment is effective.

602498

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