One-dimensional ccd sensor with overflow arrangement

Details One-dimensional ccd sensor with overflow arrangement One-dimensional ccd sensor with overflow arrangement

H - Electricity

01

L

345/1

H01L 29/76 (2006.01) H01L 27/148 (2006.01)

Patent

CA 1132260

ABSTRACT OF THE DISCLOSURE A linear row of MIS capacitors as sensor elements are arranged on a doped semiconductor body. The MIS capacitors are separated in the semicon- ductor body by a potential threshold for the optically generated minority carriers. The potential threshold, for example, can be generated by means of a field shield electrode. By means of transfer gates the sensor elements are alternately coupled with CCD shift registers. An oppositely doped over- flow drain which is contacted with an overflow electrode connects to the nar- row side of each sensor element which is opposite the corresponding transfer gate. Each overflow drain is separated from the sensor elements by a poten- tial threshold for the minority carriers which is smaller than the potential threshold between the sensor elements themselves. A varying thickness of the oxide layer, a varying doping and/or parts of the field shield electrode can serve for adjusting the potential threshold. In this manner, in a sen- sor of high component density for the electronic image gathering, an over- flow arrangement is incorporated without any additional space requirement.

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