Open tube aluminum oxide disc diffusion

Details Open tube aluminum oxide disc diffusion Open tube aluminum oxide disc diffusion

H - Electricity

01

L

356/180

H01L 21/22 (2006.01)

Patent

CA 1157576

36-SP-1172 OPEN TUBE ALUMINUM OXIDE DISC DIFFUSION. ABSTRACT OF THE DISCLOSURE A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable results. An alternative embodiment provides both the deep diffusion characteristics of aluminum with the high surface concentration of boron by using a boron nitride wafer carrier.

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