Open tube gallium diffusion process for semiconductor devices

Details Open tube gallium diffusion process for semiconductor devices Open tube gallium diffusion process for semiconductor devices

H - Electricity

01

L

356/178

H01L 21/22 (2006.01) C30B 31/08 (2006.01) C30B 31/16 (2006.01)

Patent

CA 1065498

ABSTRACT OF THE DISCLOSURE A process for diffusing gallium into a semiconductor material is disclosed in which a gaseous mixture of argon and carbon monoxide is used to transport the gallium in an open tube diffusion furnace to the semiconductor material contained in the tube where the gallium diffusion takes place.

262073

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