H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/23
H01L 31/18 (2006.01) H01L 31/02 (2006.01) H01L 31/0236 (2006.01) H01L 31/0392 (2006.01)
Patent
CA 1225139
ABSTRACT OF THE DISCLOSURE A thin film semiconductor device with enhanced optical absorption properties and a method for producing it. The device comprises a substrate having at least one sandblasted surface and a thin film of semiconductor material deposited on the sandblasted surface.
436309
Abeles Benjamin
Tiedje J. Thomas
Borden Ladner Gervais Llp
Exxon Research And Engineering Company
LandOfFree
Optical absorption enhancement in amorphous silicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Optical absorption enhancement in amorphous silicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical absorption enhancement in amorphous silicon... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1234666