H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/179
H01L 21/36 (2006.01) C23C 16/02 (2006.01) C23C 16/48 (2006.01) G03G 5/082 (2006.01) H01L 21/205 (2006.01) H01L 31/075 (2006.01) H01L 31/09 (2006.01) H01L 31/20 (2006.01)
Patent
CA 1256593
ABSTRACT OF THE DISCLOSURE A method for producing an electronic device having a multi-layer structure comprising one or more semiconductor thin layers controlled in band gap formed on a substrate comprises forming at least one of said semiconductor thin layers controlled in band gap according to the optical CVD method and forming at least one of other constituent layers according to the method comprising introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a precursor under excited state and transferring at least one pre- cursor of those precursors into a film forming space communicated with the reaction space as a feeding source for the constituent element of the deposited film.
526326
Hanna Junichi
Ohtoshi Hirokazu
Shimizu Isamu
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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