Optical devices with electron-beam evaporated multilayer mirror

Details Optical devices with electron-beam evaporated multilayer mirror Optical devices with electron-beam evaporated multilayer mirror

H - Electricity

01

S

H01S 3/08 (2006.01) H01S 5/183 (2006.01) H01S 5/028 (2006.01)

Patent

CA 2083122

This invention embodies a Vertical Cavity Surface Emitting Laser with a top mirror comprising at least one pair of quarterwave layers, each pair consisting of a low index of refraction layer and a high index of refraction layer, the high index of refraction layer being a semiconductor chosen from GaP and ZnS and the low index of refraction layer being chosen from borosilicate glass (BSG) CaF2, MgF2 and NaF. Especially useful in vertical cavity surface emitting lasers are mirrors formed by a stack of a plurality of pairs of GaP/BSG or ZnS/CdF2. Such mirrors have a high reflectivity characteristics required for an efficient operation of the laser. The GaP/BSG or ZnS/CaF2 mirror structure represents a considerable improvement over previous designs for VCSELs in terms of ultimate reflectivity, low loss, and post growth processing compatibility.

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