G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 7/20 (2006.01)
Patent
CA 2515793
A method for performing optical lithography is provided. Light is transmitted through a photomask to impinge on a target. The photomask has two mask patterns on two opposing mask surfaces separated by a transparent substrate. Light is transmitted through the first mask pattern and propagates to the second mask pattern, thereby forming a propagation pattern at that location. Light from the propagation pattern is transmitted through the second mask pattern and impinges on the target, thereby creating a target pattern. With this method, the target pattern can be changed without changing either of the mask patterns. Also, this method facilitates gradient exposure of a mask pattern.
L'invention concerne un procédé permettant de réaliser une lithographie optique. La lumière est émise à travers un photomasque pour heurter une cible. Ledit photomasque a deux motifs de masque sur deux surfaces de masque opposées qui sont séparées par un substrat transparent. La lumière émise traverse le premier motif de masque, se propage vers le second motif de masque et forme un motif de propagation à cet emplacement. La lumière provenant du motif de propagation traverse le second motif de masque, heurte la cible et crée un motif de cible. Grâce à ce procédé, on peut modifier le motif de cible sans modifier les deux motifs de masque. En outre, ledit procédé facilite le gradient d'exposition d'un motif de masque.
Bereskin & Parr
The Board Of Trustees Of The Leland Stanford Junior University
LandOfFree
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