Optical memory device comprising a semiconductor laser...

Details Optical memory device comprising a semiconductor laser... Optical memory device comprising a semiconductor laser...

G - Physics

02

F

352/37, 352/38,

G02F 3/00 (2006.01) G02F 3/02 (2006.01) H01S 5/0625 (2006.01) H01S 5/06 (2006.01) H01S 5/40 (2006.01)

Patent

CA 1270561

ABSTRACT OF THE DISCLOSURE: In an optical memory device comprising a bistable semiconduc- tor laser having two coplanar electrodes (26, 27), injection current sources (31, 32) for the respective electrodes are individual- ly adjusted to make the laser selectively latch first and second optical ingut signals (P1, P2). It is possible to provide an optical master-slave flip-flop device by optically directly coupling two optical memory devices of the type described to each other in tandem, Furthermore, an optical signal shifting device can be provided by arranging, optically in tandem, a plurality of optical master-slave flip-flop devices of the type described.

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