Optical microsystem and method for making same

H - Electricity – 01 – L

Patent

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Details

H01L 27/146 (2006.01) G02F 1/136 (2006.01) H01L 21/77 (2006.01) H01L 23/50 (2006.01)

Patent

CA 2497482

The invention concerns the manufacture of optical microsystems for miniature cameras or miniature matrix displays. The method consists in collectively manufacturing, on the front surface of a semiconductor wafer, N matrix arrays of image points and associated circuits, to produce N identical chips (10), with on the side of each array external connection pads (CC); collectively manufacturing and placing in close contact with the front surface of the semiconductor wafer a plate (22) designed for the collective formation of N identical image-forming optical structures, each image-forming optical structure covering one respective chip (10) while being adapted to form an overall image corresponding to the matrix array assembly of the respective chip; boring through the thickness of the wafer conductive vias (32) reaching up to the contact pads; and only, following those various operations, dividing the wafer into N individual optical microsystems comprising an electronic chip covered with an optical structure.

L'invention concerne la fabrication des microsystèmes optiques pour caméras miniatures ou afficheurs matriciels miniatures. On propose fabrique collectivement, sur la face avant d'une tranche semiconductrice, N réseaux matriciels de points d'image et des circuits associés, pour réaliser N puces identiques (10), avec sur le côté de chaque réseau des plages de connexion extérieure (CC); on fabrique collectivement et on place en contact étroit avec la face avant de la tranche semiconductrice une plaque (22) servant à la constitution collective de N structures optiques de formation d'image, identiques, chaque structure optique de formation d'image recouvrant une puce respective (10) et étant apte à former une image globale en correspondance avec l'ensemble du réseau matriciel de la puce respective; on ouvre à travers l'épaisseur de la tranche des vias conducteurs (32) allant jusqu'aux plages de contact, et, seulement après ces différentes opérations, on divise la tranche en N microsystèmes optiques individuels comprenant une puce électronique recouverte par une structure optique.

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