Optical semiconductor device

G - Physics – 02 – F

Patent

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G02F 1/025 (2006.01) G02B 6/12 (2006.01) G02F 1/015 (2006.01)

Patent

CA 2033246

An optical semiconductor device comprises a stripe-mesa structure provided on a semi-insulating substrate. The stripe-mesa structure comprises an undoped light absorption layer sandwiched by cladding layers, and burying layers on the both sides. For this structure, a device capacitance is decreased to provide wide bandwidth and ultra-high speed operation properties. This device is applied to an optical modulator, an integrated type optical modulator, and an optical detector.

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