Optical semiconductor device, method for manufacturing the...

G - Physics – 02 – B

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G02B 6/13 (2006.01) H01L 27/15 (2006.01) H01S 5/026 (2006.01) H01S 5/20 (2006.01) H01S 5/227 (2006.01)

Patent

CA 2352641

An optical semiconductor device is constituted from a group III-V compound semiconductor of which a crystal is grown by a selective metal-organic vapor phase epitaxy. At least two kinds of the group V elements are included and the compound semiconductor is formed under a group V element supplying condition different from that of a non-selective metal-organic vapor phase epitaxy so that the compound semiconductor includes the desired proportions of the group V elements.

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