Optical switches and detectors utilizing indirect narrow-gap...

G - Physics – 02 – F

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G02F 1/01 (2006.01) G02F 1/015 (2006.01) G02F 1/315 (2006.01) G02F 1/35 (2006.01) H01L 31/0264 (2006.01) H01L 31/0272 (2006.01) H01L 31/0352 (2006.01) H01L 31/06 (2006.01)

Patent

CA 2140451

The present invention relates to novel optical devices operating in the infrared, based on indirect nar- row-gap superlattices (INGS) as the active optical materials. The novel optical devices include (1) wideband all-optical switches, which combine small insertion loss at low light in- tensities with efficient optical switch- ing and optical limiting at high effi- ciency and low tunneling noise cur- rents, suitable for use in longwave in- frared focal plane arrays. INGS comprise multiple semimetal (22) semiconductor (26) layers having compatible crystal symmetry across each heterojunction between a given semimetal (22) sandwiched between semiconductor layers (26). Each semiconductor layer (26) is thin enough that there is coupling be- tween adjacent semiconductor layers (26). The present invention utilizes INGS, which are fabricated to meet the criteria Eindg < ?.omega. < Edirg, especially where ?.omega. < 100 meV, as the optical material for optical switches. The present inven- tion also utilizes INGS as optical detectors if they are fabricated such that Eindg < Edirg < ?.omega., especially where ?.omega. is less than 100 meV.

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