Optical transistor structure

Details Optical transistor structure Optical transistor structure

H - Electricity

01

L

345/16, 356/68

H01L 31/12 (2006.01) H01L 31/173 (2006.01) H01S 5/026 (2006.01) H01S 5/062 (2006.01) H01S 5/10 (2006.01) H01S 5/18 (2006.01)

Patent

CA 1144266

ABSTRACT OF THE DISCLOSURE An optical power transistor comprises a gallium arsenide laser diode disposed on the surface of a semicon- ductor diode. The ends of the laser diode are angled so that the laser radiation generated in the Fabry-Perot cavity is directed onto the surface of the semiconductor diode for creating electron hole pairs therein and thereby creating electrical current therethrough. In another embodiment, prism means are disposed on the ends of the laser diode for directing the laser radiation onto the semiconductor diode.

335396

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