Optically activated wafer-scale pulser with a1gaas epitaxial...

Details Optically activated wafer-scale pulser with a1gaas epitaxial... Optically activated wafer-scale pulser with a1gaas epitaxial...

H - Electricity

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H01L 31/0304 (2006.01) G02B 6/42 (2006.01) H01L 31/08 (2006.01) H01L 31/10 (2006.01)

Patent

CA 2080433

A device for generating pulses of radio frequency energy in response to pulses of laser light comprises a circular wafer of GaAs having metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the center of one of the annular epitaxial layers through which laser light is to be directed, there being a plurality of apertures in the metallized layer in contact with the AlGaAs epitaxial layer. In addition, an AlGaAs epitaxial layer may be formed opposite the first AlGaAs layer and an optical fiber brought into contact with it so that laser light can be introduced at both sides of the wafer.

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