Optically- initiated silicon carbide high voltage switch

Details Optically- initiated silicon carbide high voltage switch Optically- initiated silicon carbide high voltage switch

H - Electricity

01

L

H01L 31/09 (2006.01) H01L 31/0224 (2006.01)

Patent

CA 2626800

An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

L'invention porte sur un commutateur photoconducteur amélioré dont le matériau du substrat est en carbure de silicium (SiC) ou en autre matériau à large bande interdite tel que des garnitures GaAs et des garnitures de transformation de champ composées de préférence de SiN formé sur le susbtrat adjacent aux périmètres de l'électrode ou aux périmètres du susbtrat pour transformer les champs électriques.

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