G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 6/132 (2006.01) G02F 1/017 (2006.01) H01L 27/14 (2006.01) H01L 27/15 (2006.01) H01S 5/026 (2006.01) H01S 5/12 (2006.01) H01S 5/343 (2006.01)
Patent
CA 2224848
An opto-electronic component with two MQW structures having different functions, wherein the layer sequences that form those MQW structures are grown in a single epitaxy process of uniform layers in every layer plane. In an embodiment, a laser diode-modulator combination is provided wherein the MQW layer sequence of the laser is preferably arranged within the MQW layer sequence of the modulator.
Composant opto-électronique ayant deux structures MQW dont les fonctions sont différentes. La croissance des séquences de couches de ces structures résulte d'un unique processus d'épitaxie de couches uniformes dans chaque plan de couche. Une version particulière comprend une combinaison diode laser-modulateur, la séquence des couches MQW du laser étant de préférence disposée à l'intérieur de la séquence de couches du modulateur.
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
Stegmuller Bernhard
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