Opto-electronic device integration

H - Electricity – 01 – L

Patent

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Details

H01L 25/16 (2006.01) G02B 6/42 (2006.01) H01S 5/02 (2006.01) H01S 5/40 (2006.01) H01L 27/15 (2006.01) H01S 5/42 (2006.01)

Patent

CA 2447345

A method of integrating a chip with a backside active optical chip described. The backside active optical chip has at least one optical device, having an active side, including an optically active region and an optically inactive region each abutting a substrate (102), a bonding side opposite the active side, and a device thickness. The method involves if the substrate has a substrate thickness (t) in excess of 100 microns over the optically active region, thinning the substrate over the optically active region, while leaving at least some substrate over the optically inactive region; bonding the optical chip to the electronic chip (508) using a flip chip process; and creating access ways (510) in the substrate over optically active regions.

L'invention porte sur un procédé d'intégration d'une puce avec une puce optique à côté dorsal actif. La puce optique à côté dorsal actif, qui comporte au moins une zone optique active et une zone optique non active reposant chacune sur un substrat (102), et un côté de fixation opposé au côté actif, présente une épaisseur. Selon le procédé, si le substrat a une épaisseur (t) de plus de 100 microns dépassant au-dessus de la zone optique active, on agira comme suit: amincissement du substrat sur la zone optique active tout en laissant au moins une partie du substrat sur la zone optique non active, fixation de la puce optique électronique sur la puce électronique (508) en utilisant le procédé de la puce retournée, et création de voies d'accès (510) dans le substrat sur les zones à activité optique.

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