H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 27/144 (2006.01) H03F 3/08 (2006.01)
Patent
CA 2123667
An opto-electronic integrated circuit is arranged.to comprise a photodetector and a tunnel emitter bipolar transistor for first-stage amplification of a current generated in the photodetector, as formed on a substrate. The tunnel emitter bipolar transistor can be operated at high speed and has a high amplification factor, so that noise due to the base current can be reduced upon amplification of the current generated in the photodetector by light detection.
Sasaki Goro
Sawada Sosaku
Yano Hiroshi
Marks & Clerk
Sasaki Goro
Sawada Sosaku
Sumitomo Electric Industries Ltd.
Yano Hiroshi
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