Opto-electronic integrated circuit

H - Electricity – 01 – L

Patent

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Details

H01L 27/144 (2006.01) H03F 3/08 (2006.01)

Patent

CA 2123667

An opto-electronic integrated circuit is arranged.to comprise a photodetector and a tunnel emitter bipolar transistor for first-stage amplification of a current generated in the photodetector, as formed on a substrate. The tunnel emitter bipolar transistor can be operated at high speed and has a high amplification factor, so that noise due to the base current can be reduced upon amplification of the current generated in the photodetector by light detection.

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