Optoelectronic device

Details Optoelectronic device Optoelectronic device

H - Electricity

01

S

345/51

H01S 3/137 (2006.01) H01S 5/30 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2016623

70577-64 ABSTRACT OF THE DISCLOSURE An optoelectronic device, e.g. for integrated circuits, has an Si or III/V semiconductor layer and an insulating layer which is doped with lanthanides to generate an optical signal whose wavelength is determined by the 4f ions used. The insula- ting layer is preferably a fluoride which can be grown epit- axially on the semiconductor layer and the lanthanide element ion substituting for a metal ion of the material forming the insula- ting layer has the same valence as the metal for which it is substituted.

Affiliated with

Also associated with

Rating

Optoelectronic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optoelectronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optoelectronic device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1443414