Organic field effect transistor gate

Details Organic field effect transistor gate Organic field effect transistor gate

H - Electricity

01

L

H01L 27/28 (2006.01) H01L 51/10 (2006.01)

Patent

CA 2595114

The invention relates to an electronic component, especially an RFID transponder that comprises at least one logic gate (3). Said logic gate (3) is constituted of a plurality of layers applied to a common substrate (10). The layers comprise at least two electrode layers, at least one, especially organic, semiconductor layer (13, 23) applied from a liquid, and an insulating layer (14, 24) and are configured in such a manner that the logic gate comprises at least two differently structured field effect transistors (1, 2). Said field effect transistors (1, 2) are configured from a plurality of functional layers that can be applied to a carrier substrate (10) by a printing or doctor blade process.

L'invention concerne un composant électronique, notamment un transpondeur RFID, qui comprend au moins une porte logique (3). Cette porte logique (3) est formée de plusieurs couches qui sont appliquées sur un substrat commun (10) et qui comprennent au moins deux couches électrodes, au moins une couche semi-conductrice (13, 23), notamment organique, appliquée à partir d'un liquide, ainsi qu'une couche isolante (14, 24). Ces couches sont réalisées de sorte que la porte logique comprenne au moins deux transistors à effet de champ (1, 2) à structure différente. Les transistors à effet de champ (1, 2) sont formés de plusieurs couches fonctionnelles qui peuvent être appliquées par impression ou à la raclette sur un substrat support (10).

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