H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 51/44 (2006.01) H01L 51/00 (2006.01) H01L 51/46 (2006.01) H01L 51/48 (2006.01)
Patent
CA 2572282
An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.
Forrest Stephen R.
Yang Fan
Smart & Biggar
The Trustees Of Princeton University
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