Organic thin film transistor with dual layer electrodes

H - Electricity – 01 – L

Patent

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Details

H01L 29/40 (2006.01) H01L 29/43 (2006.01) H01L 29/786 (2006.01) H01L 51/10 (2006.01)

Patent

CA 2612033

A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.

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