C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/81
C23C 8/06 (2006.01) C23C 16/30 (2006.01) C23C 16/40 (2006.01)
Patent
CA 1212873
ABSTRACT There is provided a method of producing inorganic thin films by metal inorganic chemical vapour deposition. The method comprises forming a vapour stream comprising a vapour mixture of an organometallic compound and a heterocyclic organic compound incorporating a group V or group VI element, and thermally decomposing the mixture on a heated substrate to form an inorganic layer. The heterocyclic compound may be an aliphatic or aromatic ring compound. The mixture may include vapours appropriate for deposition of ternary or higher order compounds, and/or for introducing dopants.
439185
Cockayne Brian
Griffiths Richard J.m.
Wright Peter J.
Fetherstonhaugh & Co.
The Secretary Of State For Defence In Her Britannic Majesty's Go
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