Oscillator utilizing inductive parameter of transistor

Details Oscillator utilizing inductive parameter of transistor Oscillator utilizing inductive parameter of transistor

H - Electricity

03

B

331/14, 331/40,

H03B 7/06 (2006.01) H03B 5/12 (2006.01) H03B 1/00 (2006.01)

Patent

CA 1198182

ABSTRACT OF THE DISCLOSURE An oscillator having sufficient accuracy and precision for use in aircraft microwave-landing systems is constructed without the use of an external inductor. A resonant tank circuit comprising both capacitance and inductance is attained by the use of inductance found internally in the base-emitter junction of a transistor suitably biased for operation at the frequencies of a microwave landing system. A transistor having greater-than-unity gain in the oscillation-frequency range is selected for which the angle of the reflection coefficient of the base-emitter junction is positive in the oscillation-frequency range.

440770

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