Oscillator with bias and buffer circuits formed in a die...

H - Electricity – 03 – L

Patent

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Details

H03L 7/06 (2006.01) H03B 5/12 (2006.01) H03B 1/00 (2006.01) H03B 5/04 (2006.01)

Patent

CA 2089480

A voltage controlled oscillator and buffer amplifier circuit (211) is disclosed. The circuit is in a stacked configuration, whereby, the current from the power supply (361) is used by the buffer amplifier circuit and reused by the VCO circuit. The VCO circuit includes two transistors (333, 325). The transistors are set-up in a mirrored configuration, so that one of the transistors (325) controls the bias current in the other transistor (333). Both of the transistors are integrated into a semiconductor circuit die (365), thus, matching the thermal characteristics of the transistors (333, 325) and improving control of the bias current. The die (365) is bonded to a ceramic substrate (601). The substrate (601) has connectivity paths for connecting components in the circuit die to components external to the circuit die. Some of the connectivity paths are made of a material and length to form passive circuit elements.

Oscillateur commandé en tension et circuit d'amplificateur séparateur (211). Ce circuit, qui présente une configuration empilée, est conçu de telle façon que le courant de l'alimentation (361), d'abord utilisé par le circuit de l'amplificateur séparateur, est ensuite réutilisé par le circuit de l'oscillateur commandé en tension. Ce dernier est constitué de deux transistors (333, 325) disposés symétriquement pour que l'un d'entre eux (325) commande le courant de polarisation de l'autre (333). Étant donné que ces deux transistors sont intégrés à une puce (365) de circuit de semi-conducteur, celle-ci présente les mêmes caractéristiques thermiques que les transistors (333, 325), ce qui améliore la commande du courant de polarisation. La puce (365) est fixée à un substrat céramique (601), lequel comporte des chemins de connexion reliant certains composants de la puce à des composants extérieurs à la puce. Certains de ces chemins de connexion, en raison du matériau qui les constitue et de leur longueur, permettent de former des éléments de circuit passifs.

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