Overlapping gate buried channel charge coupled device

Details Overlapping gate buried channel charge coupled device Overlapping gate buried channel charge coupled device

H - Electricity

01

L

352/82.21

H01L 27/04 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1038080

OVERLAPPING GATE BURIED CHANNEL CHARGE COUPLED DEVICE Robert W. Bower Amr M. Mohsen ABSTRACT OF THE DISCLOSURE In a two-phase overlapping gate buried channel charge coupled device having first and second gate electrodes, the relative deep depletion characteristics of the capacitors formed by said electrodes are selectively established to create the required transfer-storage pair for two-phase operation. These characteristics may be optimized either by selective ion implants of appropriate impurity type or by using the charge storage properties of a double dielectric layer to modify the effective interface charge under the gate elec- trodes. - 1 -

233764

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