Oxide breakdown mos fuse and its application to memory cards

Details Oxide breakdown mos fuse and its application to memory cards Oxide breakdown mos fuse and its application to memory cards

H - Electricity

01

L

356/66

H01L 29/66 (2006.01) G11C 16/04 (2006.01) G11C 17/16 (2006.01) H01L 23/525 (2006.01)

Patent

CA 2020718

Le fusible MOS à claquage d'oxyde utilise comme base une cellule MOS programmable électriquement par effet tunnel et stockage de charges sur une grille ; cette cellule est transformée en fusible en prévoyant, lorsque le fusible doit être claqué, d'appliquer un champ intense, supérieur au seuil de claquage de l'oxyde, dans la fenêtre tunnel (F) : ainsi le claquage est irréversible; L'invention s'applique notamment aux fusibles destinés aux circuits intégrés des cartes à mémoires.

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