C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/08 (2006.01) B32B 15/04 (2006.01) C03C 17/22 (2006.01) C03C 17/245 (2006.01) C03C 17/34 (2006.01) C03C 17/36 (2006.01) C23C 14/00 (2006.01) C23C 14/06 (2006.01) C23C 28/00 (2006.01) G02F 1/1343 (2006.01)
Patent
CA 2202430
A method for forming an oxide film on a substrate by a sputtering process using a target comprising a metal as the main component, wherein sputtering is carried out in an atmosphere which contains a gas containing carbon atoms.
Aomine Nobutaka
Ebisawa Junichi
Hayashi Yasuo
Takaki Satoru
Asahi Glass Company Ltd.
Smart & Biggar
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