Oxide superconducting film manufacturing apparatus

H - Electricity – 01 – L

Patent

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Details

H01L 39/24 (2006.01) B23K 26/00 (2006.01) C23C 14/28 (2006.01) C23C 14/54 (2006.01)

Patent

CA 2101286

Disclosed herein is an apparatus for manufacturing an oxide superconducting film employing laser ablation method. This apparatus comprises a thin film forming chamber having a laser-transparent laser entrance window, a target being provided in the thin film forming chamber and containing components of an oxide superconductor, a laser beam source for irradiating the target with a laser beam from the exterior of the thin film forming chamber through the laser entrance window, and means for controlling power of the laser beam which is applied to the target for preventing the power of the laser beam, being applied to the target, from reduction by contamination of the entrance window caused by scattered particles. According to the present invention, it is possible to form an oxide superconducting film having high and uniform characteristics even if a long time is required for film formation, thereby attaining a remarkable effect in improvement of superconductivity of a large area oxide superconducting film.

Appareil permettant de fabriquer une couche d'oxyde supraconductrice à l'aide de la méthode d'ablation par laser. L'appareil comprend : une chambre de formation de couche mince percée d'une fenêtre d'entrée laissant passer la lumière laser; une cible, située dans la chambre de formation, contenant des éléments d'un oxyde supraconducteur; une source de faisceau laser pour irradier la cible avec un rayon laser pénétrant dans la chambre par la fenêtre d'entrée; et un dispositif de commande du faisceau laser pour empêcher que l'intensité du faisceau atteignant la cible ne diminue en raison de la contamination de la fenêtre due à la diffusion des particules. La présente invention permet de former une couche d'oxyde supraconductrice uniforme de qualité supérieure même si le temps de formation de la couche est élevé, ce qui permet d'accroître remarquablement la supraconductivité d'une couche d'oxyde supraconductrice de grande dimension.

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