C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/18 (2006.01) C23C 14/10 (2006.01) C23C 16/40 (2006.01) C23C 18/12 (2006.01) C30B 5/00 (2006.01) C30B 23/02 (2006.01) C30B 25/02 (2006.01)
Patent
CA 2153848
An oxide thin film having a quartz crystal structure formed on a substrate, the oxide thin film being composed of a single layer or a plurality of layers having a thickness of 5 nm to 50 µm per layer, each of the layer comprising silicon dioxide, germanium dioxide, or a mixture thereof.
Fujimori Naoji
Imai Takahiro
Tanaka Motoyuki
Riches Mckenzie & Herbert Llp
Sumitomo Electric Industries Ltd.
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